P-N Junction & Energy Band Gap Setup

Item Code: SK013

Principle and Working:

A semi-conductor always possesses an energy gap between its valence and conduction bands. For the conduction of electricity, a certain amount of energy is to be given to the electron so that it can jump from the valence band to the conduction band. The energy so needed is the measure of the energy gap (Eg) between the top and bottom of valence and conduction bands respectively.
The slope of V-T curve used to measure the temperature coefficient of the junction voltage and the energy band gap is given by
... Vgo=V(T) - T.dV/dT - mƞkT/q
Where V(T) - Voltage at given temperature, dV/dT - Slope of curve, for Si, m = 1.5, ƞ=2 at 300K and for Ge, m = 2, ƞ=1 at 300K, ƞ - Material constant and q - charge of electron = 1.6 x 10-19C




  • Built-in Temperature sensor with seven segment digital display.
  • Dual Purpose seven digital display.
  • Multi-Turn Pot for fine tunning of Voltage (at junction mode).
  • Built-in frequency generator 5k and 20k Hz.
  • Oven Temperature control from ambient to 353K.

  • Determination of reverse saturation current.
  • Study of Energy Band Gap of p-n Junction.
  • Study of Junction capacitance.

  • P-N Junction Setup :
    • ATJunctionn mode : Voltage Range 0.0-1.999V, Current Range 0-19.99mA, Temp. Display Ambient to 353K.
    • At Bias Mode : Voltage Range 0.00-10.00V, Frequency 5KHz & 20KHz, Voltage 20mV (p-p), Output Connector 3 Pin, DIN type.
  • Oven : Heating Element 32 ohm, Oven Connector 5 Pin, DIN type, Ambient temp. to 353K, Temp. Sensor Pt100
  • Sample : NPN transistor (Bc109), Diode IN5402
    • 1 P-N junction setup
    • 1 Oven with temperature sensor
    • 1 Junction transistor
    • 2 Diode 1N5402
    • 1 CRO probe